Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
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概要
- 論文の詳細を見る
Metalorganic chemical vapor deposition of InGaP using phosphine and tertiarybutylphosphine in various mixture ratios was carried out in order to elucidate the growth mechanism. It revealed that the two species generated from the phosphorus source, i.e., PH_x (x=O-2) radicals and phosphorus molecules (P_2 and/or P_4), are necessary for epitaxial growth with high source material efficiency.
- 社団法人応用物理学会の論文
- 1993-05-15
著者
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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Ishikawa T
Fujitsu Laboratories Ltd.
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Hori H
Department Of Electrical Engineering Faculty Of Engineering Yamanashi University
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Mashita M
Research And Development Center Toshiba Corporation
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ISHIKAWA Hironori
Research and Development Center, Toshiba Corp.
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MASHITA Masao
Research and Development Center, Toshiba Corp.
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Mashita Masao
Research And Development Center Toshiba Corporation
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HORI Hisao
Research and Development Center, Toshiba Corporation
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Ishikawa Hironori
Research And Development Center Toshiba Corporation
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