Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-01
著者
-
ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
-
ISHIKAWA Hironori
Research and Development Center, Toshiba Corp.
-
MASHITA Masao
Research and Development Center, Toshiba Corp.
-
IZUMIYA Toshihide
Research and Development Center, Toshiba Corporation
-
HIRAOKA Yoshiko
Research and Development Center, Toshiba Corporation
関連論文
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
- A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
- KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
- GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
- UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
- Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
- Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine
- Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
- Ab Initio Molecular Orbital Study on the Reaction of Trimethylaluminum with an H Radical
- Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine