UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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Sasaki M
Industrial Res. Center Of Shiga Prefecture Shiga
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Mashita M
Research And Development Center Toshiba Corporation
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SASAKI Masahiro
Research and Development Center, Toshiba Corp.
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KAWAKYU Yoshito
Research and Development Center, Toshiba Corp.
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MASHITA Masao
Research and Development Center, Toshiba Corp.
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Kawakyu Y
Toshiba Corp. Yokohama Jpn
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Sasaki M
Dow Corning Toray Silicone Co. Ltd. Chiba Jpn
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Mashita Masao
Research And Development Center Toshiba Corporation
関連論文
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- Low-Temperature Synthesis of C-Axis-Oriented Polycrystalline Aluminum Nitride Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using AlBr_3-N_2-H_2-Ar Gas System
- Preparation of AlN-Al_2O_3 Composite Films by Microwave Plasma Chemical Vapor Deposition
- Effect of Ar Gas Addition on AlN Film Formation by Microwave Plasma Chemical Vapor Deposition
- Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVD
- Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
- Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
- Effect of Heating SiH_4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon ( Plasma Processing)
- High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
- Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor
- Hg-Sensitized Photochemical Vapor Depositiorn Application to Hydrogenated Amorphous Silicon Photoconversion Layer Overlaid on Charge Coupled Device
- Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
- KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
- GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
- UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
- Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
- Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine
- Epitaxial Growth Mechanism of the (100) As Surface of GaAs : The Effect of Positive Holes : Condensed Matter
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- The Selective Deposition of a Silicon Film on Hydrogenated Amorphous Silicon by Mercury Sensitized Photochemical Vapor Deposition
- Selective Deposition of Silicon by Mercury Sensitized Photochermical Vapor Deposition
- Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
- Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
- Ab Initio Molecular Orbital Study on the Reaction of Trimethylaluminum with an H Radical
- Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine
- Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication