Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
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概要
- 論文の詳細を見る
We have investigated the possibility of using tertiarybutylphosphine (TBP) for metalorganic chemical vapor deposition (MOCVD) of Al-containing materials through InAlGaP light-emitting diode (LED) fabrication. It has been shown that a marked decrease in the performance of InAlGaP LEDs results from Zn diffusion into the active layer. The diffusion of Zn in the In0.5(Al0.7Ga0.3)0.5P cladding layer can be enhanced by increasing interstitial group-III, IIII. According to our growth model, an intrinsic disadvantage of TBP is that it decomposes at a temperature much lower than the substrate temperature and produces less-active phosphorus molecules ( P4). Since the vapor pressure of P4 is extremely high, it leads to lower effective V/III ratios on the growth surface and generation of IIII. In order to increase the effective V/III ratio, we have proposed new organic phosphorus sources that are expected to provide a large number of PH x (x=0–2) radicals on the surface.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-15
著者
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Mashita Masao
Research And Development Center Toshiba Corporation
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Ishikawa Hironori
Research And Development Center Toshiba Corporation
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Hiraoka Yoshiko
Research & Development Center Toshiba Corporation
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Izumiya Toshihide
Research And Development Center Toshiba Corporation
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Mashita Masao
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Hiraoka Yoshiko
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Izumiya Toshihide
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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Ishikawa Hironori
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
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- Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication