Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGex Substrate Based on the Theory

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概要

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• We propose an analytical model for ion implantation profiles in a Si1-xGex substrate with various content ratios $x$. The moments associated with the peak region were evaluated using the extended Lindhard–Scharff–Schiott (LSS) theory. The channeling length was related to the maximum range associated with electron stopping power only. We also express the shape of the channeling tail and the channeling dose empirically but with a universal form. We showed that the theory reproduces the experimental data well. Since the theory simultaneously gives information on the lateral distribution, we established a database of B, P, and As ion implantation profiles including their lateral distribution profiles in Si1-xGex substrates.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-07-25

著者

• KATAOKA Yuji

  Fujitsu Laboratories Ltd.

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• TADA Yoko

  Fujitsu Laboratories Ltd.

• Kojima Shuichi

  Fujitsu LSI Technology, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• Kataoka Yuji

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan

• Itani Tsukasa

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan

• Nagayama Tsutomu

  Nissin Ion Equipment Co., Ltd., 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto 601-8205, Japan

• Nagayama Susumu

  Nano Science Corporation, 7F Sumitomo Bldg., 1-10-1 Higashi Ikebukuro, Toshima, Tokyo 170-0013, Japan

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

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