Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
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概要
- 論文の詳細を見る
We modify a theoretically derived model for double-gate silicon-on-insulator metal oxide semiconductor field effect transistor (SOI MOSFET) and establish new analytical threshold voltage model for double-gate Schottky source/drain SOI MOSFET. We show the procedure for deriving this model and present a high accuracy of this model in comparison with the numerical data obtained with a two-dimensional device simulator. We found that we can get the same natural length obtained using a conventional double-gate device and better short-channel effect suppression using double-gate Schottky source/drain SOI MOSFET. Our analytical model can be used for designing Schottky barrier MOSFET with efficiency and accuracy.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-11-25
著者
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TANABE Ryo
Fujitsu Laboratories Ltd.
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SUZUKI Kunihiro
Fujitsu Laboratories Ltd.
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Suzuki Kunihiro
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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