Diffusion Coefficient of As and P in HfO2
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概要
- 論文の詳細を見る
We implanted As and P ions in a 110-nm-thick HfO2 layer, subjected the substrates to various thermal processes, and evaluated their diffusion coefficients by comparing experimental and numerical data. We found that the diffusion coefficients of As and P in HfO2 are almost the same as that of B and are much higher, by two orders, than that of B in SiO2. The impurity penetration through the HfO2 gate insulator is much more severe than that of SiO2 even though a thicker HfO2 layer is available.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-12-15
著者
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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TASHIRO Hiroko
Fujitsu Laboratories Ltd.
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Suzuki Kunihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Morisaki Yusuke
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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