Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
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概要
- 論文の詳細を見る
We propose a carrier-velocity model dependent on the lateral electric field and based on momentum and energy balance equations. The model reproduces the corresponding experimental data more accurately than the previous Sodini's model. Using the carrier-velocity model, we derived an analytical model for expressing drain current. Our drain-current model deviates from Sodini et al.'s model with decreasing gate length. This is attributed to the difference of the carrier-velocity dependence on the lateral electric field; hence, our drain-current model should be more suitable for short-channel devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
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SUZUKI Kunihiro
Fujitsu Laboratories Ltd.
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Usuki Tatsuya
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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