High Tilt Angle Ion Implantation into Polycrystalline Si Gates
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概要
- 論文の詳細を見る
We previously reported about the profiles of ion-implanted B in 400-nm-thick polycrystalline Si (poly-Si) and evaluated the profiles, showing that the channeling phenomenon is significantly suppressed by high-tilt-angle ion implantation. Here, we show that the prominent features of B profiles in poly-Si are the same as those of As and P and established a corresponding database. We also clarified that the significant channeling in poly-Si is related to the channeling in (110)-oriented grains.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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KATAOKA Yuji
Fujitsu Laboratories Ltd.
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SUZUKI Kunihiro
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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Suzuki Kunihiro
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-01, Japan
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Aoyama Takayuki
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-01, Japan
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Kataoka Yuji
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-01, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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