Impact of Metal Gate/High-k Interface in Mo Metal Gated MOSFETs with HfO_2 Gate Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
関連論文
- Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices
- Ti Salicide Process for Subquarter-Micron CMOS Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality silicon Epitaxy : Beam Induced Physics and Chemistry
- Advanced SOI Devices Using CMP and Wafer Bonding
- Coulomb Interaction Effect Correction in Electron-Beam Block Exposure Lithography
- Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
- Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces
- Direct measurement of the offset spacer effect on the carrier profiles in sub-50nm p-MOSFETs
- Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
- Chemical Structures of Native Oxides Formed during Wet Chemical Treatments
- Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate
- Sub-2nm Equivalent SiO_2 Thickness Ta_2O_5 for Gate Dielectric Using RTA+UV/O_3
- Evaluation of Shot Position Error in Electron Beam Lithography Using Overlay Metrology with 'One-Shot' Inspection Mark
- Impact Ionization in 0.1 μm Metal-Oxide-Semiconductor Field-Effect Transistors
- Trap Assisted Leakage Mechanism of 'worst' Junction in Giga-bit DRAM Using Negative Word-Line Voltage
- Threshold Voltage Instability of 45-nm-node Poly-Si-or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si
- Impact of Metal Gate/High-k Interface in Mo Metal Gated MOSFETs with HfO_2 Gate Dielectrics
- Low Contact Resistance Poly-Metal Gate CMOS Using TiN/Thin TiSi_2/Poly-Si Structure
- Low-Contact Resistance Poly-Metal Gate Electrode Using TiN/Thin TiSi_2/Poly-Si Structure
- Process Integration Issues on Mo-Metal-Gated MOSFETs with HfO2 High-k Gate Dielectrics
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy
- Study of Peeling at Doped NiSi/SiO2 Interface
- Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
- Potential of and Issues with Multiple-Stressor Technology in High-Performance 45 nm Generation Devices
- Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy