Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy

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概要

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• We measured the two-dimensional carrier profiles of $n$-type field effect transistors ($n$-FETs) with various gate lengths (Lg) by scanning tunneling microscopy. The extension overlap and the distribution of the depletion layers were evaluated to clarify that the measured carrier profiles were consistent with the roll-off characteristic of corresponding transistors. The effect of a pocket implant on a long transistor appeared where the lateral depletion width was locally shorter than the vertical one. In the $n$-FET with a gate length less than 40 nm, the effect of the pocket impurities from the opposite side mainly appeared as a reduction in the extension overlap in the deep region. Although the presence of this pocket increased the top channel concentration, the short length of the effective channel resulted in the spread of the depletion layer in the deep-channel region via the two-dimensional effect.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• AOYAMA Takayuki

  Fujitsu Laboratories Lid.

• FUKUTOME Hidenobu

  Fujitsu Laboratories Ltd.

• Arimoto Hiroshi

  Fujitsu Laboratories Limited

• Aoyama Takayuki

  FUJITSU LABORATORIES LTD. 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• Fukutome Hidenobu

  FUJITSU LABORATORIES LTD. 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• Arimoto Hiroshi

  FUJITSU LIMITED. 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

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