KrF Resist Pattern Monitoring by Ellipsometry
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概要
- 論文の詳細を見る
This is a report on a rapid and accurate optical method for monitoring line widths by ellipsometry. Samples with a KrF chemically amplified positive resist (TDUR-P009) were exposed by a KrF stepper with 0.35-μm dense line/space patterns (0.70 μm pitch) and 0.30-μm sparse line patterns (2.0 μm pitch), and measured by ellipsometry. Ellipsometry was found to be effective in monitoring changes in resist line widths and cross-sectional shapes due to variations in focus and dose. Multivariable regression analysis was adopted to predict the line width and the focus position of a stepper. Good agreement (3σ=4.3 nm) between CD-SEM measured and predicted widths was achieved. Also, focus positions were accurately predicted. The results of spectroscopic ellipsometry, which provides many ellipsometric parameters in a short period, are shown.
- 社団法人応用物理学会の論文
- 1997-12-30
著者
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ARIMOTO Hiroshi
Semiconductor Leading Edge Technologies
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KAWAMURA Eiichi
Fujitsu Limited
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Hoshi Kenji
Fujitsu Limited
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Arimoto H
Semiconductor Leading Edge Technologies Inc.
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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