Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-30
著者
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Koba Fumihiro
Semiconductor Leading Edge Technologies Inc.
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OGINO Kozo
Fujitsu Ltd.
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HOSHINO Hiromi
Fujitsu Ltd.
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MACHIDA Yasuhide
Fujitsu Ltd.
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OSAWA Morimi
Fujitsu Ltd.
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YAMASHITA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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ARIMOTO Hiroshi
Semiconductor Leading Edge Technologies
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Osawa Morimi
Fujitsu Limited
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Manabe Y
Fujitsu Ltd. Kawasaki Jpn
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Arimoto H
Semiconductor Leading Edge Technologies Inc.
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Hoshino H
Fujitsu Ltd.
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Ogino Kenji
Graduate School Of Bio-applications And Systems Engineering Tokyo Univ. Of Agriculture And Technolog
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Osawa Morimi
Fujitsu Laboratories Ltd.
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Koba Fumihiro
Semiconductor Leading Edge Technologies
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Machida Yasuhide
Fujitsu Limited
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Hoshino Hiromi
Fujitsu Limited
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Ogino Kozo
Fujitsu Limited
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- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- High-Speed Proximity Effect Correction System for Electron-Beam Projection Lithography by Cluster Processing
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- Role of Ions and Radical Species in Silicon Nitride Deposition by ECR Plasma CVD Method
- Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
- KrF Resist Pattern Monitoring by Ellipsometry
- Three-Dimensional Proximity Effect Correction for Multilayer Structures in Electron Beam Lithography
- Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization
- High-Speed Proximity Effect Correction System for Electron-Beam Projection Lithography by Cluster Processing
- Full-Chip Lithography Verification for Multilayer Structure in Electron-Beam Lithography
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