Highly Accurate Proximity Effect Correction for 100 kV Electron Projection Lithography
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概要
- 論文の詳細を見る
In this paper we provided an adequate approximation to an actual exposure intensity distribution (EID) for 100 kV electron projection lithography (EPL) by using a new function employing 2-Gaussian plus exponential model. We have evaluated correction accuracy of our new model using the optimum EID parameters. The parameters were extracted from measured resist linewidth exposed by using a mask with test patterns. The test patterns were resized by changing nominal EID parameters. We found that by using the new EID function with the optimum parameters the correction accuracy for pattern space dependency was improved by 8 nm. The EID function was especially effective to device patterns that had various line pitches. It was noteworthy that this simple EID function, consisting of only three terms, led to significant improvement in the correction accuracy.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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YAMASHITA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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ARIMOTO Hiroshi
Semiconductor Leading Edge Technologies
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Koba Fumihiro
Semiconductor Leading Edge Technologies
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