Process Integration Issues on Mo-Metal-Gated MOSFETs with HfO2 High-k Gate Dielectrics
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概要
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We investigate a MoNx/HfO2 gate stack fabricated using a gate-first process flow. We ideally etch the MoNx/HfO2 gate stack using a Cl2-O2 gas system. The work function variation of MoNx gates is more than 0.7 eV. The work function can extensively cover the energy of the band gap of Si except that near the conduction band. In addition, we show issues on thermal budget from N diffusion in Mo and the reaction of Mo with HfO2. We propose that thin-SiN insertion between MoNx and HfO2, and a decrease in Mo thickness are useful in fabricating process windows. On the basis of the results, we fabricate metal-oxide-semiconductor (MOS) devices and show their excellent characteristics.
- 2005-04-15
著者
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Nara Yasuo
Fujitsu Laboratories Ltd.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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Aoyama Takayuki
FUJITSU LABORATORIES LTD., 50 Fuchigami, Akiruno 197-0833, Japan
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