FUKUTOME Hidenobu | Fujitsu Laboratories Ltd.

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著作論文

Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
Direct measurement of the offset spacer effect on the carrier profiles in sub-50nm p-MOSFETs
Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50 nm N-MOSFET by Scanning Tunneling Microscopy
Sub-30-nm Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with Pt-Incorporated Fully Ni-Silicide/SiON Gate Stack
Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy
Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors

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