Saiki Takashi | Fujitsu Limited Advanced Lsi Development Div.
スポンサーリンク
概要
関連著者
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Saiki Takashi
Fujitsu Limited Advanced Lsi Development Div.
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AOYAMA Takayuki
Fujitsu Laboratories Lid.
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FUKUTOME Hidenobu
Fujitsu Laboratories Ltd.
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KAWAMURA Kazuo
Fujitsu Laboratories Ltd.
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USUJIMA Akihiro
FUJITSU LIMITED
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Nakamura Ryou
Fujitsu Limited Advanced Lsi Development Div.
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Nakamura Ryo
Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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KATAOKA Yuji
Fujitsu Laboratories Ltd.
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KASE Masataka
Fujitsu Ltd.
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NAKAMURA Ryou
FUJITSU Ltd.
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Saiki Takashi
New Energy And Industrial Technology Development Organization (endo) Alcohol Production Head Office
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SAIKI Takashi
FUJITSU LIMITED, Advanced LSI development div.
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Usujima Akihiro
Fujitsu Limited Advanced Lsi Development Div.
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Kawamura Kazuo
Fujitsu Ltd., Fuchigami 50, Akiruno, Tokyo 197-0833, Japan
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Kawamura Kazuo
Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Inagaki Satoshi
Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Saiki Takashi
Fujitsu Ltd., Fuchigami 50, Akiruno, Tokyo 197-0833, Japan
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Saiki Takashi
Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Kataoka Yuji
Fujitsu Laboratories, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nakamura Ryou
Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Usujima Akihiro
Fujitsu Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Fukutome Hidenobu
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
著作論文
- Direct measurement of the offset spacer effect on the carrier profiles in sub-50nm p-MOSFETs
- Dependence of Sheet Resistance of CoSi2 with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process
- Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors
- Dependence of CoSi2 Sheet Resistance on Cobalt Thickness for Gate Lengths of 50 nm or Less