KAWAMURA Kazuo | Fujitsu Laboratories Ltd.

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概要

• 同名の論文著者
• Fujitsu Laboratories Ltd.の論文著者

関連著者

• KAWAMURA Kazuo

  Fujitsu Laboratories Ltd.

• Tsuda Kenji

  Fujitsu Ltd.

• Tsuda K

  Tohoku Univ. Sendai

• Terauchi Masami

  Institute For Multidisciplinary Research For Advanced Materials Tohoku University

• NAKAJIMA Anri

  Fujitsu Laboratories Ltd.

• Saiki Takashi

  Fujitsu Limited Advanced Lsi Development Div.

• Kawamura Kazuo

  Fujitsu Ltd

• Nakamura Ryo

  Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• 津田 健治

  東北大多元研

• 寺内 正己

  東北大多元研

• 津田 健治

  東北大学多元物質科学研究所

• TERAUCHI Masami

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• 青山 肇

  技術研究組合超先端電子技術開発機構(aset)超微細sr露光技術研究室(pxl研究室)

• KATAOKA Yuji

  Fujitsu Laboratories Ltd.

• TOMITA Hirofumi

  Fujitsu Laboratories Ltd.

• 青山 肇

  株式会社半導体先端テクノロジーズ

• Aoyama Hajime

  Fujitsu Laboratories Ltd.

• SUGITA Yoshihiro

  Fujitsu Laboratories Ltd.

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• Tsuda Kenji

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• KASE Masataka

  Fujitsu Ltd.

• Kawamura K

  Jst‐erato Kawasaki Jpn

• Miyata Noriyuki

  Fujitsu Laboratories Ltd.

• Kawamura K

  Kochi Univ. Kochi Jpn

• MITSUISHI Hajime

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

• Mitsuishi Hajime

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• TSUDA Kenji

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• Kawamura Kazuo

  Fujitsu Ltd., Fuchigami 50, Akiruno, Tokyo 197-0833, Japan

• Kawamura Kazuo

  Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• Inagaki Satoshi

  Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• Saiki Takashi

  Fujitsu Ltd., Fuchigami 50, Akiruno, Tokyo 197-0833, Japan

• Kataoka Yuji

  Fujitsu Laboratories, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

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著作論文

• Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH_4OH/H_2O_2/H_2O
• Detection of characteristic signals from As-doped (
• Resistivity of Heavily Doped Polycrystalline Silicon Subjected to Furnace Annealing
• Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections
• Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
• Dependence of Sheet Resistance of CoSi2 with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process
• Dependence of CoSi2 Sheet Resistance on Cobalt Thickness for Gate Lengths of 50 nm or Less

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