Dependence of CoSi2 Sheet Resistance on Cobalt Thickness for Gate Lengths of 50 nm or Less

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we report a novel process for reducing a large distribution of sheet resistance ($R_{\text{s}}$) of CoSi2 with a low resistivity of 18 μ$\Omega$ cm [O. Akhavan et al.: Appl. Sur. Sci. 233 (2004) 123] in narrow lines by establishing a simple model for explaining the dependence of $R_{\text{s}}$ on the gate length ($L_{\text{g}}$). We prove that the distribution of $R_{\text{s}}$ is mainly influenced by the shape of the high resistivity (147 μ$\Omega$ cm) cobalt monosilicide (CoSi) phase [A. Applebaum et al.: J. Appl. Phys. 57 (2005) 1880] formed in the first rapid thermal annealing (RTP-1) in the salicide process, and demonstrate that a tight distribution of $R_{\text{s}}$ for $L_{\text{g}}=30$ nm can be achieved by optimizing the cobalt thickness to enhance the transformation to CoSi2.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-05-15

著者

• KAWAMURA Kazuo

  Fujitsu Laboratories Ltd.

• Saiki Takashi

  Fujitsu Limited Advanced Lsi Development Div.

• Kawamura Kazuo

  Fujitsu Ltd., Fuchigami 50, Akiruno, Tokyo 197-0833, Japan

• Nakamura Ryo

  Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

• Saiki Takashi

  Fujitsu Ltd., Fuchigami 50, Akiruno, Tokyo 197-0833, Japan

関連論文

• Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH_4OH/H_2O_2/H_2O
• Detection of characteristic signals from As-doped (
• Direct measurement of the offset spacer effect on the carrier profiles in sub-50nm p-MOSFETs
• Resistivity of Heavily Doped Polycrystalline Silicon Subjected to Furnace Annealing
• Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections
• Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
• Dependence of Sheet Resistance of CoSi2 with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process
• Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors
• Dependence of CoSi2 Sheet Resistance on Cobalt Thickness for Gate Lengths of 50 nm or Less

スポンサーリンク