TSUDA Kenji | Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

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著作論文

Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction
Lattice parameter determination of a composition controlled Si_Ge_x layer on a Si (001) substrate using convergent-beam electron diffraction
X-ray and Electron Diffraction Study of a Precipitation Phase in Nd_Ce_CuO_ Single Crystal(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
Investigation of the Structure of Single Crystal Sr_3Ru_2O_7 by Neutron and Convergent Beam Electron Diffractions (Condensed Matter: Structure, Mechanical and Thermal Properties)
Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
Novel Size Effect of LaMnO_ Nanocrystals Embeded in SBA-15 Mesoporous Silica(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
Simulations of Kikuchi patterns due to thermal diffuse scattering on MgO crystals
Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections
Space Group Determination of Al2(WO4)3 using Convergent-Beam Electron Diffraction
Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga--Al Flux
Charge and Orbital Order Patterns in an A-Site Ordered Perovskite-Type Manganite SmBaMn2O6 Determined by Convergent-Beam Electron Diffraction
Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga-Al Flux
Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)

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