Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga--Al Flux

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概要

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• We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga--Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5\times 10^{9} cm-2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.

• 2012-10-25

著者

• Fukuyama Hiroyuki

  Institute Of Multidisciplimary Research For Advanced Materials Tohoku University

• Adachi Masayoshi

  Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University

• Tanaka Akikazu

  Ichikawa Research Laboratory Sumitomo Metal Mining Co. Ltd.

• TAKASUGI Mari

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• MORIKAWA Daisuke

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• Morikawa Daisuke

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan

• TSUDA Kenji

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• Tsuda Kenji

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan

• Takasugi Mari

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan

• Adachi Masayoshi

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan

• Fukuyama Hiroyuki

  Institute for Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan

• Tanaka Akikazu

  Ichikawa Research Laboratory, Sumitomo Metal Mining Co., Ltd., Ichikawa, Chiba 272-8588, Japan

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