Tanaka Akikazu | Ichikawa Research Laboratory Sumitomo Metal Mining Co. Ltd.
スポンサーリンク
概要
関連著者
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Fukuyama Hiroyuki
Institute Of Multidisciplimary Research For Advanced Materials Tohoku University
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Adachi Masayoshi
Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University
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Tanaka Akikazu
Ichikawa Research Laboratory Sumitomo Metal Mining Co. Ltd.
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Fukuyama Hiroyuki
Institute for Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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FUKUYAMA Hiroyuki
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
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TAKASUGI Mari
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
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MORIKAWA Daisuke
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
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TSUDA Kenji
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University
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Tsuda Kenji
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Sugiyama Masashi
Ichikawa Research Laboratory Sumitomo Metal Mining Co. Ltd.
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Tanaka Akikazu
Ichikawa Research Laboratory, Sumitomo Metal Mining Co., Ltd.
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Morikawa Daisuke
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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Tsuda Kenji
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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Takasugi Mari
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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Adachi Masayoshi
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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Tanaka Akikazu
Ichikawa Research Laboratory, Sumitomo Metal Mining Co., Ltd., Ichikawa, Chiba 272-8588, Japan
著作論文
- Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga--Al Flux
- Elimination of Rotational Domain in AlN Layers Grown from Ga-Al Flux and Effects of Growth Temperature on the Layers
- Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga-Al Flux