Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates
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概要
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We have grown AlN films by pulsed laser deposition (PLD) on sapphire (0001) substrates nitrided in a carbon-saturated N2--CO gas mixture and investigated their structural properties. It is found that AlN epilayers prepared on as-grown N2--CO nitrided sapphire consist of two domains whose $\langle 10\bar{1}0\rangle_{\text{AlN}}$ directions are rotated by approximately $\pm 0.5$° from the $\langle 11\bar{2}0\rangle_{\text{sapphire}}$ directions. On the other hand, a nitrogen radical treatment of the as-grown nitrided substrate makes it possible to eliminate one of the domains without any degradation in crystalline quality. The full width at half maximum values of X-ray rocking curves for the 0002 and $10\bar{1}2$ diffractions of the AlN film are as low as 27 and 590 arcsec, respectively.
- 2011-01-25
著者
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Institute Of Industrial Science The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Fukuyama Hiroyuki
Institute for Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
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