Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature

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概要

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• We have grown AlN layers on atomically flat ZnO(000$\bar{1}$) substrates by pulsed laser deposition at room temperature (RT) and investigated their structural properties. The reflection high-energy electron-diffraction (RHEED) intensity monitoring and atomic force microscopy (AFM) observations have revealed that the RT growth of AlN films proceeds by a layer-by-layer mode from the initial stage of the growth, and that the surfaces of the AlN films possess atomically-flat terraces separated by straight steps. We have also found that the AlN/ZnO heterointerfaces are atomically abrupt.

• Japan Society of Applied Physicsの論文
• 2006-11-25

著者

• 小林 篤

  東京大学大学院工学系研究科

• Kobayashi Atsushi

  Institute Of Industrial Science (iis) The University Of Tokyo

• Ohta Jitsuo

  Institute Of Industrial Science (iis) The University Of Tokyo

• FUJIOKA Hiroshi

  Institute of Industrial Science (IIS), The University of Tokyo

• Kobayashi Atsushi

  Department Of Applied Chemistry The University Of Tokyo

• Ueno Kohei

  Institute Of Industrial Science The University Of Tokyo

• Fujioka Hiroshi

  Institute Of Industrial Science (iis) The University Of Tokyo

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