GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
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概要
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We grew GaN epitaxial films on LiTaO3 by pulsed laser deposition (PLD) for the first time and investigated their structural properties. Atomically flat surfaces can be achieved on the LiTaO3 substrates by annealing at 1050°C in a box made of LiNbO3. We found that GaN(0001) grows epitaxially on these atomically flat LiTaO3(0001) substrates at substrate temperatures ranging from 580 to 700°C, with an in-plane epitaxial relationship of GaN[$10\bar{1}0$]$\parallel$LiTaO3[$11\bar{2}0$]. X-ray reflectivity measurements revealed that the thickness of the interfacial layer between GaN and LiTaO3 decreases from 1.9 to 0.4 nm by reducing the growth temperature from 700 to 580°C. We used GaN films grown at 580°C as buffer layers for the growth of GaN films at 700°C, and found that the crystalline quality and the surface morphology of these films were improved by the use of the low-temperature buffer layer.
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
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小林 篤
東京大学大学院工学系研究科
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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Kobayashi Atsushi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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FUJIOKA Hiroshi
Institute of Industrial Science (IIS), The University of Tokyo
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Kobayashi Atsushi
Department Of Applied Chemistry The University Of Tokyo
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Toyoshima Yasushi
Univ. Tokyo Tokyo Jpn
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Tsuchiya Yousuke
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Ja
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Tsuchiya Yousuke
Department of Applied Chemistry, The University of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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