Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO
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概要
- 論文の詳細を見る
We have grown GaN on atomically flat ZnO (000-1) substrates at room temperature with pulsed laser deposition (PLD). We have found that atomically flat surfaces of ZnO (000-1) substrates with a clear step and terrace structure have been obtained by annealing in a box made of ceramic ZnO. We have also found that GaN grows epitaxially even at room temperature on the step and terrace ZnO surface. Reflection high energy electron diffraction (RHEED) observations have revealed that the GaN film grows in the layer by layer mode from the early stage of the film growth. X-ray reflectivity measurements have revealed that the heterointerface between GaN and ZnO is quite abrupt and its roughness is less than 0.5 nm.
- Japan Society of Applied Physicsの論文
- 2004-01-15
著者
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Ohta Jitsuo
Department Of Applied Chemistry The University Of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Kobayashi Atsushi
Department Of Applied Biological Science Tokyo University Of Agriculture And Technology
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Fujioka Hiroshi
Department Of Applied Chemistry The University Of Tokyo
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Fujioka Hiroshi
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Ohta Jitsuo
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Oshima Masaharu
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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