Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
We have fabricated $c$-plane GaN/InN heterostructures on yttria-stabilized zirconia (111) substrates by pulsed laser deposition, and have characterized the abruptness of the interfaces. We have found that GaN can be epitaxially grown on InN even at 300 °C and that the GaN/InN interface is quite abrupt, although an intermixed layer (In0.15Ga0.85N) is formed during the growth of GaN on InN at 500 °C. It has also been revealed that the abruptness of GaN/InN interfaces fabricated at 300 °C remains unchanged even after annealing at 500 °C. These results indicate that the activation energy for the intermixing reactions between InN and GaN is much larger than that between InN and film precursors during the growth of GaN. These results indicate that the use of the low temperature growth technique is quite promising for the fabrication of high-mobility electronic devices based on GaN/InN heterostructures.
- Japan Society of Applied Physicsの論文
- 2010-02-25
著者
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KOBAYASHI Atsushi
Department of Chemistry, Kyushu University
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小林 篤
東京大学大学院工学系研究科
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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SHIMOMOTO Kazuma
Institute of Industrial Science (IIS), The University of Tokyo
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FUJIOKA Hiroshi
Institute of Industrial Science (IIS), The University of Tokyo
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Kobayashi Atsushi
Department Of Applied Chemistry The University Of Tokyo
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Shimomoto Kazuma
Institute Of Industrial Science The University Of Tokyo
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Fujii Tomoaki
Institute Of Industrial Science The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Fujii Tomoaki
Institute Of Industrial Science (iis) The University Of Tokyo
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Kobayashi Atsushi
Department Of Applied Biological Science Tokyo University Of Agriculture And Technology
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Shimomoto Kazuma
Institute Of Industrial Science (iis) The University Of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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