Layer-by-Layer Growth of InAlN Films on ZnO($000\bar{1}$) Substrates at Room Temperature
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概要
- 論文の詳細を見る
We have grown In-rich InxAl1-xN ($x = 0.6{\mbox{--}}0.7$) films on nearly lattice-matched ZnO($000\bar{1}$) substrates at various temperatures ranging from room temperature (RT) to 600 °C by the use of pulsed laser deposition and investigated their structural properties. Grazing-incidence X-ray reflection and X-ray diffraction revealed that films grown at RT are composed of single-phase InAlN and possess atomically flat surfaces and abrupt interfaces. In addition, we have found that RT-growth of InAlN films on ZnO($000\bar{1}$) surfaces proceeds in a layer-by-layer mode from the initial stages of film growth.
- Japan Society of Applied Physicsの論文
- 2010-02-25
著者
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Institute Of Industrial Science The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujii Tomoaki
Institute Of Industrial Science (iis) The University Of Tokyo
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Kobayashi Atsushi
Department Of Applied Biological Science Tokyo University Of Agriculture And Technology
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Shimomoto Kazuma
Institute Of Industrial Science (iis) The University Of Tokyo
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KAJIMA Tomofumi
Department of Applied Chemistry, The University of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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