Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation
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概要
- 論文の詳細を見る
- 2013-02-25
著者
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Kobayashi Atsushi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Inoue Shigeru
Institute Of Industrial Science (iis) The University Of Tokyo
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GUO Yao
Institute of Industrial Science, The University of Tokyo
関連論文
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- Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
- Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
- Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature
- GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
- Characteristics of Thick $m$-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers
- Polarity Dependence of Structural and Electronic Properties of Al2O3/InN Interfaces
- Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates
- Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
- Improvements in Optical Properties of Semipolar $r$-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
- Characteristics of $m$-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
- Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
- Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition
- Room-Temperature Epitaxial Growth of High-Quality $m$-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
- Structural and Optical Properties of Nonpolar AlN(11$\bar{2}$0) Films Grown on ZnO(11$\bar{2}$0) Substrates with a Room-Temperature GaN Buffer Layer
- Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
- Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
- Layer-by-Layer Growth of InAlN Films on ZnO($000\bar{1}$) Substrates at Room Temperature
- Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation
- Structural Properties of m-Plane InAIN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers