Kobayashi Atsushi | Institute Of Industrial Science (iis) The University Of Tokyo
スポンサーリンク
概要
関連著者
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Kobayashi Atsushi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Institute Of Industrial Science The University Of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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小林 篤
東京大学大学院工学系研究科
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FUJIOKA Hiroshi
Institute of Industrial Science (IIS), The University of Tokyo
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Kobayashi Atsushi
Department Of Applied Chemistry The University Of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Inoue Shigeru
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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Li Guoqiang
Institute Of Industrial Science The University Of Tokyo
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Shimomoto Kazuma
Institute Of Industrial Science The University Of Tokyo
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Toyoshima Yasushi
Univ. Tokyo Tokyo Jpn
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Sato Kazuhiro
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505
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Inoue Shigeru
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505
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Tsuchiya Yousuke
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Ja
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Shimomoto Kazuma
Institute Of Industrial Science (iis) The University Of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry, The University of Tokyo
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Fujioka Hiroshi
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Fujioka Hiroshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Fujioka Hiroshi
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Hiroshi Fujioka
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Fujioka Hiroshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Kawano Satoshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Kawaguchi Yuji
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Shimomoto Kazuma
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Kobayashi Atsushi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Kobayashi Atsushi
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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OKUBO Kana
Department of Applied Chemistry, The University of Tokyo
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Kohei Ueno
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Ueno Kohei
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Ohta Jitsuo
Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ohta Jitsuo
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ohta Jitsuo
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Jitsuo Ohta
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Mitamura Kazuya
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Tsuchiya Yousuke
Department of Applied Chemistry, The University of Tokyo
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OKAMOTO Koichiro
Institute of Industrial Science, The University of Tokyo
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KAJIMA Tomofumi
Department of Applied Chemistry, The University of Tokyo
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Liu Jiangwei
Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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GUO Yao
Institute of Industrial Science, The University of Tokyo
著作論文
- Improvement in the Crystalline Quality of Semipolar AlN($1\bar{1}02$) Films by Using ZnO Substrates with Self-Organized Nanostripes
- Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
- Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature
- GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
- Polarity Dependence of Structural and Electronic Properties of Al2O3/InN Interfaces
- Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
- Improvements in Optical Properties of Semipolar $r$-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
- Characteristics of $m$-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
- Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
- Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition
- Structural and Optical Properties of Nonpolar AlN(11$\bar{2}$0) Films Grown on ZnO(11$\bar{2}$0) Substrates with a Room-Temperature GaN Buffer Layer
- Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
- Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
- Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation
- Structural Properties of m-Plane InAIN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers