Characteristics of Thick $m$-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers

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概要

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• We have grown 500-nm-thick $m$-plane In0.33Ga0.67N films on nearly-lattice-matched ZnO substrates by the use of a GaN intermediate-layer grown at room temperature, and we have investigated their structural and optical properties. X-ray diffraction and associated reciprocal space mapping have revealed that these $m$-plane In0.33Ga0.67N films do not show serious phase separation, in spite of their thickness. Photoluminescence from the strained $m$-plane In0.33Ga0.67N was polarized with $E\parallel c$, which indicates a change in the characteristic of valence band, probably due to the large compressive strain. These properties of In0.33Ga0.67N are promising for high-efficiency solar cells and low-threshold-current laser diodes.

• Japan Society of Applied Physicsの論文
• 2010-06-25

著者

• KOBAYASHI Atsushi

  Department of Chemistry, Kyushu University

• OSHIMA Masaharu

  Department of Engineering, University of Tokyo

• Ohta Jitsuo

  Institute Of Industrial Science (iis) The University Of Tokyo

• SHIMOMOTO Kazuma

  Institute of Industrial Science (IIS), The University of Tokyo

• FUJIOKA Hiroshi

  Institute of Industrial Science (IIS), The University of Tokyo

• Ueno Kohei

  Institute Of Industrial Science The University Of Tokyo

• Fujioka Hiroshi

  Institute Of Industrial Science (iis) The University Of Tokyo

• Kobayashi Atsushi

  Department Of Applied Biological Science Tokyo University Of Agriculture And Technology

• Shimomoto Kazuma

  Institute Of Industrial Science (iis) The University Of Tokyo

• OSHIMA Masaharu

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

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