Improvements in Optical Properties of Semipolar $r$-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
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概要
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We have investigated the structural and optical properties of semipolar $r$-plane GaN{$1\bar{1}02$} films grown on nearly-lattice-matched ZnO substrates with room-temperature (RT) epitaxial GaN buffer layers, putting special emphasis on the effect of surface treatment of the ZnO substrates. The full-width at half-maximum values of X-ray rocking curves for 1-μm-thick $r$-plane GaN layers grown at 700 °C on these RT-buffer layers, as measured using various X-ray incidence geometries, are in a range from 313 to 598 arcsec. Photoluminescence peaks attributable to structural defects in the $r$-plane GaN films have been shown to be reduced, and the near-band-edge emission has been enhanced by approximately 5 times by the use of atomically-flat $r$-plane ZnO substrates prepared by high-temperature annealing in air inside a box made of ZnO.
- 2010-10-25
著者
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Kobayashi Atsushi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Institute Of Industrial Science The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujioka Hiroshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Kawano Satoshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Ueno Kohei
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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