Room-Temperature Epitaxial Growth of High-Quality $m$-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
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概要
- 論文の詳細を見る
We have found that single-phase $m$-plane In0.24Al0.76N($1\bar{1}00$) grows without phase separation in the layer-by-layer mode at room temperature from the initial stages of the growth. The full-width at half-maximum (FWHM) values of the $1\bar{1}00$ X-ray rocking curves (XRCs) for the film with X-ray incident azimuths perpendicular to the $c$- and $a$-axes are 119 and 102 arcsec, respectively. $m$-plane In0.24Al0.76N films grew without accommodating misfit dislocations beyond the critical thickness on ZnO($1\bar{1}00$) substrates, which is probably due to the large energy barrier for the initiation process of misfit dislocations and is responsible for the small FWHM values for XRCs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-07-25
著者
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Ueno Kohei
Institute Of Industrial Science The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Fujii Tomoaki
Institute Of Industrial Science (iis) The University Of Tokyo
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Kobayashi Atsushi
Department Of Applied Biological Science Tokyo University Of Agriculture And Technology
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Shimomoto Kazuma
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujii Tomoaki
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Kajima Tomofumi
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Oshima Masaharu
Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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KAJIMA Tomofumi
Department of Applied Chemistry, The University of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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