Chemical trend of Fermi-level shift in transition metal-doped TiO2 films

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概要

• 論文の詳細を見る

• The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO2 films grown on Nb-doped TiO2(110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO2 films, the Ti 2p and O 1s core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy.

• 公益社団法人 日本セラミックス協会の論文

著者

• KUMIGASHIRA Hiroshi

  Department of Physics,Tohoku University

• Kumagai M

  National Research Institute For Metals

• Kumagai M

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Kawasaki M

  Institute For Materials Research (imr) Tohoku University

• Kawasaki Masashi

  Institute For Materials Research (imr) Tohoku University

• Matsumoto Y

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Kubo Momoji

  Department Of Materials Chemistry Graduate School Of Engineering Tohoku University

• Ohsawa Takeo

  Materials And Structures Laboratory Tokyo Institute Of Technology

• OSHIMA Masaharu

  Department of Engineering, University of Tokyo

• Kawasaki Masashi

  Department Of Applied Biological Science Tokyo Noko University

• Kawasaki Masashi

  Department Of Industrial Chemistry University Of Tokyo

• Kumigashira Hiroshi

  Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo

• Kawasaki M

  Joint Research Center For Atom Technology (jrcat) : Department Of Innovative And Engineered Material

• Ohsawa Takeo

  Materials And Structures Lab. Tokyo Inst. Of Technol.

• MATSUMOTO Yuji

  Materials and Structures Laboratory, Tokyo Institute of Technology

• Katayama Masao

  Materials and Structures Laboratory, Tokyo Institute of Technology

• Abe Takatoshi

  Materials and Structures Laboratory, Tokyo Institute of Technology

• OHKUBO Isao

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

• KOINUMA Hideomi

  Graduate School of Frontier Sciences, The University of Tokyo

• Matsumoto Y

  Nara Inst. Sci. And Technol. Ikoma‐shi Jpn

• Oshima Masaharu

  Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo

• Matsumoto Yuji

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Katayama Masao

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Kawasaki Masashi

  Quantum-phase Electronics Center (qpec) And Department Of Applied Physics University Of Tokyo

• KUMIGASHIRA Hiroshi

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

• Ohsawa Takeo

  Materials and Structures Laboratory, Tokyo Institute of Technology

• KOINUMA Hideomi

  Graduate School of Frontier Science, The University of Tokyo

• OSHIMA Masaharu

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

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