Polarity Dependence of Structural and Electronic Properties of Al₂O₃/InN Interfaces

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概要

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• We have fabricated Al₂O₃/InN heterostructures on yttria-stabilized zirconia (111) substrates and investigated their structural and electronic characteristics, putting special emphasis on the effects of the polarity of the InN films. We have found that In-polar InN (0001) films grow with atomically flat surfaces, which makes a striking contrast to the case of N-polar InN (000$\bar{1}$) films, where InN films show rough surfaces. High resolution X-ray photoelectron spectroscopy measurements have revealed that the Al₂O₃/In-polar InN interfaces are abrupt, although InO_x interdiffused layers are formed at the Al₂O₃/N-polar InN interfaces. We have also found that the valence band offset of Al₂O₃/In-polar InN is 2.8 eV, while that of N-polar InN is slightly smaller, probably because the surface of In-polar InN is more resistant to the oxidizing atmosphere of the atomic layer deposition process used for Al₂O₃ deposition.

• 2011-09-25

著者

• Kobayashi Atsushi

  Institute Of Industrial Science (iis) The University Of Tokyo

• Ohta Jitsuo

  Institute Of Industrial Science (iis) The University Of Tokyo

• Fujioka Hiroshi

  Institute Of Industrial Science (iis) The University Of Tokyo

• OKUBO Kana

  Department of Applied Chemistry, The University of Tokyo

• OSHIMA Masaharu

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

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