Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the effect of substrate temperature on the structural properties of InGaN with high In concentrations grown on atomically flat ZnO substrates by pulsed laser deposition using an In0.65Ga0.35 alloy target. Although the InGaN film grown at 650 °C shows poor crystalline quality and has a rough surface, those grown at temperatures below 420 °C have surfaces with stepped and terraced structures. We found that the epitaxial growth of InGaN at low temperatures proceeds by the layer-by-layer mode, which is consistent with the atomically flat surfaces of InGaN. We also found that phase separation of InGaN is suppressed by reducing the growth temperature.
- Japan Society of Applied Physicsの論文
- 2006-07-25
著者
-
Kobayashi Atsushi
Institute Of Industrial Science (iis) The University Of Tokyo
-
Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
-
Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
-
Fujioka Hiroshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
-
Ohta Jitsuo
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
関連論文
- Fabrication and Characterization of AlN/InN Heterostructures
- Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates
- Improvement in the Crystalline Quality of Semipolar AlN($1\bar{1}02$) Films by Using ZnO Substrates with Self-Organized Nanostripes
- Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
- Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
- Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature
- GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
- Characteristics of Thick $m$-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers
- Polarity Dependence of Structural and Electronic Properties of Al2O3/InN Interfaces
- Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates
- Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
- Improvements in Optical Properties of Semipolar $r$-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
- Characteristics of $m$-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
- Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
- Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition
- Room-Temperature Epitaxial Growth of High-Quality $m$-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
- Structural and Optical Properties of Nonpolar AlN(11$\bar{2}$0) Films Grown on ZnO(11$\bar{2}$0) Substrates with a Room-Temperature GaN Buffer Layer
- Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
- Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
- Layer-by-Layer Growth of InAlN Films on ZnO($000\bar{1}$) Substrates at Room Temperature
- Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation
- Structural Properties of m-Plane InAIN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers