Structural and Optical Properties of Nonpolar AlN(11$\bar{2}$0) Films Grown on ZnO(11$\bar{2}$0) Substrates with a Room-Temperature GaN Buffer Layer

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概要

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• We have grown $a$-plane AlN films on ZnO substrates using room temperature epitaxial GaN buffer layers by pulsed laser deposition (PLD). The basal plane stacking fault density of these AlN($11\bar{2}0$) films, as estimated from X-ray rocking curve measurements, is as low as $1.1\times10^{5}$ cm-1, which is attributed to the use of ZnO substrates with a small lattice mismatch. Cathode luminescence spectra measured at 300 K exhibited a clear near band-edge peak of AlN at around 5.9 eV. The use of a PLD low-temperature growth technique and ZnO substrates would be quite attractive for the fabrication of ultraviolet light-emitting devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-06-25

著者

• Kobayashi Atsushi

  Institute Of Industrial Science (iis) The University Of Tokyo

• Ohta Jitsuo

  Institute Of Industrial Science (iis) The University Of Tokyo

• Ueno Kohei

  Institute Of Industrial Science The University Of Tokyo

• Hiroshi Fujioka

  Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

• Kohei Ueno

  Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

• Jitsuo Ohta

  Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

関連論文

• Fabrication and Characterization of AlN/InN Heterostructures
• Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates
• Improvement in the Crystalline Quality of Semipolar AlN($1\bar{1}02$) Films by Using ZnO Substrates with Self-Organized Nanostripes
• Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
• Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
• Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature
• GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
• Characteristics of Thick $m$-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers
• Polarity Dependence of Structural and Electronic Properties of Al2O3/InN Interfaces
• Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates
• Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
• Improvements in Optical Properties of Semipolar $r$-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
• Characteristics of $m$-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
• Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
• Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition
• Room-Temperature Epitaxial Growth of High-Quality $m$-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
• Structural and Optical Properties of Nonpolar AlN(11$\bar{2}$0) Films Grown on ZnO(11$\bar{2}$0) Substrates with a Room-Temperature GaN Buffer Layer
• Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
• Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
• Layer-by-Layer Growth of InAlN Films on ZnO($000\bar{1}$) Substrates at Room Temperature
• Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation
• Structural Properties of m-Plane InAIN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers

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