Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
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概要
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SiO2 films have been deposited on m-plane ZnO(1\bar{1}00) substrates by atomic layer deposition method at 200 °C and the interface has been investigated. Band structures of amorphous SiO2/m-plane ZnO(1\bar{1}00) heterointerface have been characterized by X-ray photoelectron spectroscopy, showing type I band configuration with valence and conduction band offsets of 1.7\pm 0.2 and 3.6\pm 0.2 eV, respectively. Capacitance--voltage (C--V) measurements of Al/SiO2/m-plane ZnO(1\bar{1}00) have been performed. When gate bias was swept from positive to negative, a ledge appeared in the C--V curve of the Al/SiO2/m-plane ZnO structure, which is probably due to the emission of electrons trapped at the near-midgap deep levels. However, it is found that the surface treatment for ZnO using HCl yielding automatically flat stepped and terraced surface improves the C--V curve without the ledge.
- 2013-01-25
著者
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Kobayashi Atsushi
Institute Of Industrial Science (iis) The University Of Tokyo
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujioka Hiroshi
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ohta Jitsuo
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ueno Kohei
Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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Liu Jiangwei
Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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