Improvement in the Crystalline Quality of Semipolar AlN($1\bar{1}02$) Films by Using ZnO Substrates with Self-Organized Nanostripes

概要

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We have found that self-organized nanostripes structures can be formed on the surface of ZnO($1\bar{1}02$) substrates by annealing in the air, and high quality semipolar AlN can be grown on such substrates by growing a room temperature epitaxial AlN buffer layer. The full width at half maximum value of the X-ray rocking curve for AlN $1\bar{1}02$ was as low as 500 arcsec. The observed tilt of the AlN($1\bar{1}02$) layer grown on ZnO($1\bar{1}02$) with self-organized nanostripes is smaller than that on as-received ZnO($1\bar{1}02$), indicating that the nanostripes structure suppresses the introduction of misfit dislocations at the heterointerface probably due to the reduced stress field around the nanostripes. This reduction in the density of the misfit dislocations is probably responsible for the improvement in crystalline quality.
Japan Society of Applied Physicsの論文
2010-04-25