Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates
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概要
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We have investigated the epitaxial growth of InN films on yttria-stabilized zirconia (YSZ) substrates with various surface orientations. Through systematic crystallographic investigations, we have found that the epitaxial relationship of $\text{InN}[11\bar{2}0] \parallel \text{YSZ}\ [1\bar{1}0]$ and $\text{InN}[0001] \parallel \text{YSZ}\ [111]$ holds in the InN/YSZ system. This enables us to grow semipolar InN films with arbitrary orientations.
- 2010-08-25
著者
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Ohta Jitsuo
Institute Of Industrial Science (iis) The University Of Tokyo
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Fujioka Hiroshi
Institute Of Industrial Science (iis) The University Of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Fujii Tomoaki
Institute Of Industrial Science (iis) The University Of Tokyo
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Kobayashi Atsushi
Department Of Applied Biological Science Tokyo University Of Agriculture And Technology
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Shimomoto Kazuma
Institute Of Industrial Science (iis) The University Of Tokyo
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Shimomoto Kazuma
Institute of Industrial Science (IIS), The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Kobayashi Atsushi
Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Ohta Jitsuo
Institute of Industrial Science (IIS), The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Fujii Tomoaki
Institute of Industrial Science (IIS), The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Oshima Masaharu
Department of Applied Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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