Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The chemical bonding states and band alignment of ultrathin AlOxNy/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry were investigated by synchrotron radiation photoemission spectroscopy (SRPES). The depth distribution profile of the Al 2p binding energy states remained unchanged which indicates no formation of an Al-silicate layer. Judging from the deconvolution of Si 2p spectra, it was inferred that the AlOxNy/Si interface consists mainly of Si2O3 and SiO2. On the basis of the valence-band spectra and photoelectron energy loss spectra, we evaluated the valence- and conduction-band offsets of AlOxNy films on Si in detail.
- Japan Society of Applied Physicsの論文
- 2009-07-25
著者
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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SHIMOGAKI Yukihiro
Department of Materials Engineering, The University of Tokyo
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TOYODA Satoshi
Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry The University Of Tokyo
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He Gang
Department Of Applied Chemistry The University Of Tokyo
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Toyoda Satoshi
Department Of Applied Chemistry The University Of Tokyo
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Toyoda Satoshi
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
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OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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