NAKAJIMA Anri | Fujitsu Laboratories Ltd.

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著作論文

Formation of Sb Nanocrystals in SiO_2 Film Using Ion Implantation Followed by Thermal Annealing
Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH_4OH/H_2O_2/H_2O
Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory
Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition

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