HORIGUCHI Naoto | Fujitsu Laboratories Ltd.
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概要
関連著者
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HORIGUCHI Naoto
Fujitsu Laboratories Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Yokoyama N
Fujitsu Laboratories Ltd.
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Futatsugi T
Fujitsu Laboratories Ltd.
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Horiguchi N
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
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Mankad Tanaya
Materials Department University Of California
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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MANKAD Tanaya
Materials Department, University of California
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PETROFF Pierre
Materials Department, University of California
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Petroff P
Univ. California California Usa
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Petroff Pierre
Materials Department University Of California Santa Barbara
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Nakata Y
Fujitsu Laboratories Ltd.
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USUKI Tatsuya
Fujitsu Laboratories Ltd.
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Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
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YAMAMOTO Tomonari
Fujitsu Ltd.
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SUGII Toshihiro
FUJITSU LABORATORIES LTD.
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Yamamoto Tomonari
Fujitsu Laboratories Ltd.
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NAKAJIMA Anri
Fujitsu Laboratories Ltd.
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Tagawa Yukio
Fujitsu Ltd.
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Tagawa Yukio
Fujitsu Laboratories Ltd.
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KOJIMA Manabu
Fujitsu Laboratories Ltd.
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Nakata Yoshiaki
Fujitsu Laboratories Ltd.,
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Horiguchi Naoto
Fujitsu Laboratories Ltd.,
著作論文
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Formation of Sb Nanocrystals in SiO_2 Film Using Ion Implantation Followed by Thermal Annealing
- Scenario of Source/Drain Extension and Halo Engineering for High Performance 50nm SOI-pMOSFET
- Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots