Nakata Yoshiaki | Fujitsu Laboratories Limited
スポンサーリンク
概要
関連著者
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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Muto S
Kek Ibaraki
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Yokoyama N
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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武藤 真三
山梨大学
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Nakata Y
Fujitsu Laboratories Ltd.
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Fujii Toshio
Fujitsu Laboratories Lid.
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Ishikawa T
Riken Harima Institute
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Limited
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
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Tackeuchi A
Department Of Applied Physics Waseda University
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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MUTO Shunichi
Department of Applied Physics, Hokkaido University
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Sugawara M
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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武藤 真三
山梨大学工学部
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AKIYAMA Tomoyuki
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
北海道大学 薬学研究臨床薬剤学
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HORIGUCHI Naoto
Fujitsu Laboratories Ltd.
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IMAMURA Kenichi
Fujitsu Laboratories Ltd.
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Sugawara M
Semiconductor Company Sony Corporation
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Futatsugi T
Fujitsu Laboratories Ltd.
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Sugawara M
Fujitsu Limited And Fujitsu Laboratories Limited
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Muto Shinzo
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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武藤 俊介
名古屋大学
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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HAGA Tetsuya
Department of Applied Physics, Hokkaido University
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MUTO Shunichi
Faculty of Engineering, Hokkaido University
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WADA Osamu
Fujitsu Laboratories Ltd.
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Wada Osamu
FESTA Laboratories
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Imamura K
Fujitsu Lab. Ltd. Kanagawa Jpn
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Haga T
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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Wada Osamu
Fujitsu Laboratories Limited
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Wada Osamu
Fujitsu Laboratories
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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Mankad Tanaya
Materials Department University Of California
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Imamura Kimitake
Faculty Of Engineering Yokohama National University
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Wada Osamu
The Femtosecond Technology Research Association:the Kobe University.
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Horiguchi N
Fujitsu Laboratories Ltd.
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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USUKI Tatsuya
Fujitsu Laboratories Ltd.
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AWANO Yuji
Fujitsu Ltd.
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Jayavel Pachamuthu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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EBE Hiroji
Research Center for Advanced Science and Technology, University of Tokyo
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SUGAWARA Mitsuru
Research Center for Advanced Science and Technology, University of Tokyo
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MATSUMURA Naoki
Department of Applied Physics, Hokkaido University
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ISHIKAWA Hiroshi
Fujitsu Laboratories Ltd.
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MUKAI Kohki
Fujitsu Laboratories Ltd.
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MUKAI Kohki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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MANKAD Tanaya
Materials Department, University of California
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PETROFF Pierre
Materials Department, University of California
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ENDOH Akira
Fujitsu Laboratories Ltd.
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NISHIKAWA Yuji
Fujitsu Laboratories Ltd.
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Usuki Tatsuya
Department Of Applied Physics Osaka University
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Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
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Petroff P
Univ. California California Usa
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Petroff Pierre
Materials Department University Of California Santa Barbara
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Mukai K
Univ. Tokyo Chiba Jpn
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Ishikawa T
Kyushu Univ. Fukuoka Jpn
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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Ishikawa Tetsuya
Riken Harima Institute
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Matsumura Naoki
Department Of Applied Physics Hokkaido University
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Arakawa Yasuhiko
Research Center For Advanced Science And Technology And Institute Of Industrial Science University O
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Sasa S
Fujitsu Laboratories Ltd.
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Matsumura N
Kyoto Inst. Technol. Kyoto Jpn
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Usuki T
Fujitsu Lab. Ltd. Atsugi Jpn
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Ohnishi Hiroaki
Division Of Hematology Faculty Of Medicine Kagawa University
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Ishikawa H
Fukuyama Univ. Hiroshima Jpn
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Sugawara Mitsuru
Institute Of Industrial Science (iis) The University Of Tokyo
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Ebe Hiroji
Institute Of Industrial Science (iis) The University Of Tokyo
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Ishikawa Hiroshi
Fujitsu Laboratories Limited
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Akiyama Tomoyuki
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Akiyama Tomoyuki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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WADA Osamu
Department of Applied Quantum Physics, Kyushu University
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OKUMURA Shigekazu
Fujitsu Laboratories Ltd.
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TAKATSU Motomu
Fujitsu Laboratories Ltd.
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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Kita T
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Akiyama Tomoyuki
Qd Laser Inc.
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KITA Takeshi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
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NUMATA Ken
Kanagawa High-Technology Foundation
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YABUTA Konami
Kanagawa High-Technology Foundation
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HATORI Nobuyuki
Fujitsu Laboratories Ltd.
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AKIYAMA Tomoyuki
Femtosecond Technology Research Association
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YAMAGUCHI Masaomi
Fujitsu Limited
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OHSHIMA Toshio
Fujitsu Laboratories Ltd.
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SASAKURA Hirotaka
Department of Applied Physics, Faculty of Engineering Hokkaido University
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ISHIGURE Tsuyoshi
Department of Applied Physics, Hokkaido University
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SHIRAMINE Ken-ichi
Department of Applied Physics, Hokkaido University
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HORISAKI Yasunobu
Department of Applied Physics, Hokkaido University
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SUZUKI Dai
Department of Applied Physics, Hokkaido University
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ITOH Satoru
Department of Applied Physics, Hokkaido University
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EBIKO Yoshiki
Department of Applied Physics, Hokkaido University
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Kataoka Mayako
Department of Applied Physics, Hokkaido University
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SHOJI Hajime
Fujitsu Laboratories Ltd.
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Shiramine Ken-ichi
Department Of Applied Physics Hokkaido University
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Yamaguchi Masaomi
Fujitsu Lab. Ltd. Kanagawa Jpn
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Sasakura Hirotaka
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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Wada O
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Sugiyama Y
Jst‐crest Ibaraki Jpn
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Ebe H
Univ. Tokyo Tokyo Jpn
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Wada Osamu
The Femtosecond Technology Research Association
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Tatebayashi Jun
Research Center For Advanced Science And Technology University Of Tokyo
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Ueda Osamu
Fujitsu Laboratories Ltd.
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Itoh Satoru
Department Of Applied Physics Hokkaido University
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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Itoh S
Futaba Corp. Chiba Jpn
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Ebiko Y
Fujitsu Lab. Ltd. Atsugi Jpn
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Ebiko Yoshiki
Department Of Applied Physics Hokkaido University
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Hatori Nobuaki
Institute Of Industrial Science (iis) The University Of Tokyo
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OTSUBO Koji
Fujitsu Ltd.
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YAMAGUCHI Yasuhiro
Fujitsu Laboratories Ltd.
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Kita T
Institute Of Natural Science Kobe University
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Murayama Masahiro
Department Of Applied Chemistry
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Ueda O
Graduate School Of Biomedical Sciences Hiroshima University
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Ueda Osamu
Fujitsu Laboratories Lid.
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Sandhu Adarsh
Fujitsu Laboratories Limited
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SASA Sigehiko
Fujitsu Laboratories Limited
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KODAMA Kunihiko
Fujitsu Laboratories Limited
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NAKAMURA Satoshi
Fujitsu Laboratories Ltd.
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Horisaki Yasunobu
Department Of Applied Physics Hokkaido University
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Suzuki Dai
Department Of Applied Physics Hokkaido University
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Itoh S
Kyushu Univ. Kasuga Jpn
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Kita Takeshi
Department Of Bacteriology Hirosaki University School Of Medicine
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Ekawa Mitsuru
Fujitsu Laboratories Ltd.
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Kuramata Akito
Fujitsu Laboratories Limited
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Ishida Mitsuru
Institute Of Industrial Science (iis) University Of Tokyo
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Ohshima T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Kataoka Mayako
Department Of Applied Physics Hokkaido University
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KITAMURA Takamitsu
Department of Applied Physics, Waseda University
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Arimoto H
Fujitsu Lab. Ltd. Atsugi Jpn
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Arimoto Hiroshi
Fujitsu Laboratories Limited
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KITADA Hideki
Fujitsu Laboratories Ltd
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Kitada H
Fujitsu Laboratories Ltd
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Ishigure Tsuyoshi
Department Of Applied Physics Hokkaido University
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Kuroda Takamasa
Department Of Applied Physics Waseda University
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Tanaka Hirokazu
Department Of Applied Physics National Defense Academy
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Yamaguchi Yasuhiro
Fujitsu Laboratories Ltd
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Yamaguchi Yasuhiro
Fujitsu Laboratories Lid.
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Kawaguchi Kenichi
Fujitsu Laboratories Limited
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Wada Osamu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Uetake Ayahito
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Yokoyama Naoki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Yokoyama Naoki
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Ebe Hiroji
Institute of Industrial Science (IIS), University of Tokyo, Japan
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Ebe Hiroji
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Ebe Hiroji
Institute of Industrial Science (IIS), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Otsubo Koji
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Kuramata Akito
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Nakamura Satoshi
Fujitsu Laboratories Limited
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Muto Shunichi
Faculty of Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo, Hokkaido 060, Japan
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Tatebayashi Jun
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Kawaguchi Kenichi
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kawaguchi Kenichi
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Sugawara Mitsuru
Institute of Industrial Science (IIS), University of Tokyo, Japan
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Sugawara Mitsuru
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Sugawara Mitsuru
Institute of Industrial Science (IIS), University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Tanaka Hirokazu
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Ekawa Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ekawa Mitsuru
Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Jayavel Pachamuthu
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
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Kitamura Takamitsu
Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
著作論文
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots