Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-10-15
著者
-
WADA Osamu
Department of Applied Quantum Physics, Kyushu University
-
NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
-
Ebe Hiroji
Fujitsu Laboratories Ltd.
-
Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
-
Nakata Y
Fujitsu Ltd. Atsugi Jpn
-
Kita T
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
-
KITA Takeshi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
-
Wada O
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
-
Ebe H
Univ. Tokyo Tokyo Jpn
-
Wada Osamu
The Femtosecond Technology Research Association
-
Wada Osamu
Department Of Applied Quantum Physics Kyushu University
-
Kita T
Institute Of Natural Science Kobe University
-
Sugawara Mitsuru
Fujitsu Laboratories Ltd.
-
Sugawara M
Fujitsu Laboratories Ltd.
-
Nakata Y
Fujitsu Laboratories Ltd.
-
Kita Takeshi
Department Of Bacteriology Hirosaki University School Of Medicine
-
Nakata Yoshiaki
Fujitsu Laboratories Limited
-
Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
-
Wada Osamu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
-
Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
- Specific Heat Study of Novel Spin-Gapped System : (CH_3)_2NH_2CuCl_3(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- PE-190 Mitral Annulus Velocity by the Tissue Doppler Method Is Associated With B-Type Natriuretic Peptide Levels(Echo/Doppler 8 (I) : PE32)(Poster Session (English))
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
- Interdiffusion between InAs Quantum Dots and GaAs Matrices
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
- Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
- THE EFFECT OF AGE ON CADMIUM RETENTION IN ORGANS OF HAMSTERS.
- U-shaped Effect of Drinking and Linear Effect of Smoking on Risk for Stomach Cancer in Japan
- Effect of Age on the Relationship between Gastric Cancer and Helicobacter pylori
- Long-term Effect of Helicobacter pylori Infection on Serum Pepsinogens
- Association between Family History and Gastric Carcinoma among Young Adults
- Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films
- Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
- Flexible Field Emission Device Using Carbon Nanofiber Nanocomposite Sheet
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
- Automatically-Controlled C-Band Wavelength Conversion with Constant Output Power Based on Four-Wave Mixing in SOA's(Lasers, Quantum Electronics)
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
- Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
- Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
- BUTYLTIN METABOLISM IN PREGNANT RATS AND FETUSES IN RELATION TO PLACENTAL TRANSFER OF BUTYLTIN COMPOUNDS
- ECO-BIO-TOXICOLOGY AND PREVENTIVE TOXICOLOGY
- INFLUENCE OF PROPAGERMANIUM (SK-818) ON CHEMICALLY INDUCED RENAL LESIONS IN RATS
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- Theory of Exciton Spontaneous Emission in Semiconductor Mesoscopic Quantum Disks Embedded in a Planar Microcavity
- Threshold Current and Its Temperature Dependence in InGaAsP/InP Strained Quantum-Well Lasers under a Magnetic Field
- Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
- The Acceptor Level of Fe in In_ Ga_ P
- Temperature Dependence of GaAs^Bi_x Band Gap Studied by Photoreflectance Spectroscopy
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
- DISTRIBUTION AND CHROMIUM BINDING CAPACITY OF LOW-MOLECULAR-WEIGHT, CHROMIUM BINDING SUBSTANCE IN MICE
- EFFECT OF TIN COMPOUNDS ON ENZYMES IN RAT BRAIN
- COMPARISON OF THE TRANSPORT SYSTEM OF METALS IN MOUSE LIVER : WITH SPECIAL REFERENCE TO THE MECHANISM OF BILIARY EXCRETION OF METALS
- STUDIES ON MANGANESE METABOLISM : WITH SPECIAL REFERENCE TO THE ROLE OF.LIVER LYSOSOMES
- THE CHANGE OF ZINC BINDING LIGANDS IN MILK DURING THE ENZYMATIC DIGESTION
- STUDIES ON MANGANESE METABOLISM IN BODY : WITH SPECIAL REFERENCE TO THE EXCRETION MECHANISMS THROUGH LIVER TO BILE (The 6th Meeting for the Study of Toxic Effect)
- PARTIAL PURIFICATION OF DITHIZONE-STAINABLE ZINC IN BRAIN
- PURIFICATION AND BIOLOGICAL SIGNIFICANCE OF A SPECIFIC CHROMIUM-BINDING SUBSTANCE (A LOW MOLECULAR WEIGHT CHROMIUM-BINDING SUBSTANCE) FOUND IN ORGANS OF MAMMALS
- MECHANISM OF HYPERLIPIDEMIA INDUCED BY METHYL IODIDE AND TRIBUTYLTIN
- EFFECT OF TRIPHENYLTIN ON PLATELET AGGREGATlON AND ATP SECERTION INDUCED BY COLLAGEN, ADP AND ARACHIDONIC ACID
- EFFECTS OF TRIBUTYLTIN AND ITS METABOLITES ON BRAIN FUNCTION
- HYPERLIPEMIA INDUCED IN RABBITS BY TRIPHENYLTIN FLUORIDE AND ITS MECHANISM
- DISTRIBUTION OF TRACE METALS IN NUCLEI AND NUCLEOLI OF NORMAL AND REGENERATING RAT LIVER
- BIOCHEMICAL STUDIES ON DITHIZONE-STAINABLE ZINC BRAIN
- Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- DISTRIBUTION, BIOTRAMSFORMATION AND BIOLOGICAL HALF-LIFE OF TRI-, DI-, MONO-BUTYLTIN IN RATS (The 6th Meeting for the Study of Toxic Effect)
- THE DETERMINATION OF METABOLITES OF TOLUENE, XYLENE AND STYRENE IN URINE BY HIGH-SPEED LIQUID CHRONATOGRAPHY (The 5th Meeting for the Study of Toxic Effect)
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- INTRODUCTION OF NEW INDICES INTO CONTINUOUS AVOIDANCE TEST : A TRIAL TO DETECT THE EFFECTS OF SODIUM CHLORIDE AND MANNITOL ON AVOIDANCE BEHAVIOR
- Femtosecond Response of Diffraction Efficiency of GaAs/AlGaAs Photorefractive Multiple Quantum Well
- A Case Report : Pregnancy Complicated by Blue Rubber-Bleb Nevus Syndrome
- ORIGIN OF URINARY ALKALINE PHOSPHATASE EXCRETED BY CADMIUM-TREATMENT OF RABBITS
- STUDIES ON THE ORIGIN OF THE INCREASED ACTIVITY OF ALKALINE PHOSPHATASE IN URINE OF CADMIUN TREATED RAIBBITS (The 5th Meeting for the Study of Toxic Effect)
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Conformational Change of Boundary Lipids Surrounding the Rhodopsin of Purple Membrane by Conjugation of Sodium Dodecyl Sulphate
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers