Threshold Current and Its Temperature Dependence in InGaAsP/InP Strained Quantum-Well Lasers under a Magnetic Field
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
関連論文
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- Theory of Exciton Spontaneous Emission in Semiconductor Mesoscopic Quantum Disks Embedded in a Planar Microcavity
- Threshold Current and Its Temperature Dependence in InGaAsP/InP Strained Quantum-Well Lasers under a Magnetic Field
- Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
- The Acceptor Level of Fe in In_ Ga_ P
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)