Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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WADA Osamu
Department of Applied Quantum Physics, Kyushu University
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ARAKAWA Yasuhiko
Research Center for Advanced Science and Technology, University of Tokyo
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Jayavel Pachamuthu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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KITA Takashi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
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EBE Hiroji
Research Center for Advanced Science and Technology, University of Tokyo
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SUGAWARA Mitsuru
Research Center for Advanced Science and Technology, University of Tokyo
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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AKIYAMA Tomoyuki
Fujitsu Laboratories Ltd.
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Akiyama Tomoyuki
Qd Laser Inc.
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Wada O
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Ebe H
Univ. Tokyo Tokyo Jpn
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Kita T
Institute Of Natural Science Kobe University
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Arakawa Yasuhiko
Univ. Of Tokyo
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Arakawa Yasuhiko
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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Nakata Y
Fujitsu Laboratories Ltd.
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Arakawa Y
Nanoelectronics Collaborative Research Center The University Of Tokyo
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- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
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