A Pseudomorphic In_<0.53>Ga_<0.47>As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-08-20
著者
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Ishikawa T
Riken Harima Institute
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FUJII Toshio
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Hiyamizu Satoshi
Fujitsu Limited
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Muto S
Kek Ibaraki
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Fujii Toshio
Fujitsu Laboratories Lid.
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Sasa S
Fujitsu Laboratories Ltd.
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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