High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Takashima Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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SCHIMIZU Tatsuo
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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SUZUKI Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Schimizu T
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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