FUJII Toshio | Fujitsu Laboratories Ltd.

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概要

• 同名の論文著者
• Fujitsu Laboratories Ltd.の論文著者

関連著者

• FUJII Toshio

  Fujitsu Laboratories Ltd.

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• Hiyamizu Satoshi

  Fujitsu Limited

• NAKATA Yoshiaki

  Fujitsu Laboratories Ltd.

• Nakata Yoshiaki

  Fujitsu Laboratories Limited

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• INATA Tsuguo

  Fujitsu Laboratories Ltd.

• Ishikawa T

  Riken Harima Institute

• Muto S

  Kek Ibaraki

• サンドゥー アダルシュ

  東工大

• Sandhu A

  Fujitsu Laboratories Ltd.

• Sandhu Adarsh

  Fujitsu Laboratories Limited

• ANDO Hideyasu

  Fujitsu Laboratories Ltd.

• Ando H

  Toshiba Corp. Kawasaki Jpn

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Fujii Toshio

  Fujitsu Laboratories Limited

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Fujii T

  Central Research Institute Of Electric Power Industry

• SUGIYAMA Yoshihiro

  Fujitsu Limited

• Sugiyama Y

  Fujitsu Laboratories Ltd.

• NANBU Kazuo

  Fujitsu Laboratories Ltd.

• Nanbu Kazuo

  Fujitsu Laboratories Limited

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• OKAMOTO Naoya

  Fujitsu Laboratories Ltd.

• ISHIKAWA Hideaki

  Fujitsu Laboratories Ltd.

• Ishikawa T

  Fujitsu Laboratories Ltd.

• Sugiyama Yoshinobu

  Fujitsu Laboratories Ltd.

• Okamoto N

  Fujitsu Lab. Ltd. Atsugi Jpn

• Sugiyama Yoshihiro

  Fujitsu Laboratories Ltd.

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• Hashimoto Hisao

  Fujitsu Limited

• SASA Shigehiko

  Fujitsu Laboratories Ltd.

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• TAKAHASHI Tsuyoshi

  Fujitsu Laboratories Ltd.

• Takahashi Teruo

  Department Of Organic And Polymeric Materials Tokyo Institute Of Technology

• Takahashi Tetsuo

  National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

• Taguchi Tomohiro

  Department Of Organic Materials Tokyo Institute Of Technology

• Ishikawa Takatoshi

  Department Of Applied Physics Faculty Of Science Fukuoka University

• Takahashi T

  Japan Advanced Institute Of Science And Technology

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Hashimoto Hisao

  Fujitsu Laboratories Limited

• KATAOKA Yuji

  Fujitsu Laboratories Ltd.

• TACKEUCHI Atsushi

  Fujitsu Laboratories Ltd.

• Wada Osamu

  Fujitsu Laboratories Limited

• Wada Osamu

  Fujitsu Laboratories

• Kataoka Y

  Toshiba Corp. Yokohama Jpn

• Ishikawa T

  National Space Dev. Agency Of Japan Ibaraki Jpn

• Ohnishi Hiroaki

  Fujitsu Laboratories Ltd.

• TOMIOKA Takeshi

  Fujitsu Laboratories Ltd.

• Nakata Yoshinori

  Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute

• Sasa S

  Fujitsu Laboratories Ltd.

• Nakata Y

  Fujitsu Laboratories Ltd.

• Ohnishi H

  Taihei Kogyo Co. Ltd. Himeji Jpn

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Nanbu K

  Fujitsu Laboratories Ltd.

• Ohnishi Hiroaki

  Division Of Hematology Faculty Of Medicine Kagawa University

• Tackeuchi A

  Department Of Applied Physics Waseda University

• Yamaguchi M

  Department Of Physics Yokohama National University

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Sugiyama Y

  Jst‐crest Ibaraki Jpn

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Saito J

  Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn

• Saito Junji

  Fujitsu Laboratories Limited

• Wada O

  Fujitsu Laboratories Ltd.

• Saito Junji

  Fujitsu Laboratories Ltd.

• Ueda Osamu

  Fujitsu Laboratories Ltd.

• Kubo Hitoshi

  Department Of Orthopaedic Surgery Kakogawa National Hospital

• FURUYA Akira

  Fujitsu Laboratories Ltd.

• MAKIUCHI Masao

  Fujitsu Laboratories Ltd.

• NOBUHARA Hiroyuki

  Fujitsu Laboratories Ltd.

• YAMAGUCHI Masahito

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• IWAI Taisuke

  Fujitsu Limited

• YAMAGUCHI Yasuhiro

  Fujitsu Laboratories Ltd.

• Hamaguchi C

  Osaka Univ. Osaka Jpn

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Kubo H

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hiyamizu Satoshi

  Fujitsu Laboratories Ltd.

• Saito J

  New Business Development Department Nikon Corporation In Hitachi Maxell

• Saito Jun

  Nikon Corp. New Business Development Department

• Ueda O

  Graduate School Of Biomedical Sciences Hiroshima University

• Ueda Osamu

  Fujitsu Laboratories Lid.

• YAMAURA Shinji

  Fujitsu Laboratories Ltd.

• Taniguchi Kenji

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• BAMBA Yasuo

  Fujitsu Laboratories Ltd.

• ISHII Kazuaki

  Fujitsu Laboratories Ltd.

• Shigematsu Hisao

  Fujitsu Laboratories Ltd.

• Takahashi Toshiaki

  Department Of Environment And Mutation Research Institute For Radiation Biology And Medicine Hiroshi

• Yamaguchi Masakazu

  Research And Development Center Toshiba Corporation

• Yamaguchi Masafumi

  Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation

• Yamaguchi Masafumi

  Ntt Electrical Communications Laboratories

• Kubo Hitoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Bamba Y

  Fujitsu Laboratories Ltd.

• Bamba Yasuo

  Fujitsu Laboratories Limited

• Iwai Taisuke

  Fujitsu Laboratories Ltd.

• Furuya Akira

  Fujitsu Laboratories

• Mimura Takashi

  Fujitsu Laboratories Ltd.

• JOSHIN Kazukiyo

  Fujitsu Laboratories Ltd.

• YAMADA Hiroshi

  Fujitsu Laboratories Ltd.

• SUGAHARA Tomonobu

  Fujitsu Laboratories Limited

• SAKURAI Teruo

  Fujitsu Laboratories Limited

• Yamaguchi M

  Nagoya Univ. Nagoya Jpn

• Yamaguchi Masahito

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Takahashi T

  Second Department Of Internal Medicine Hiroshima University School Of Medicine

• Nobuhara Hiroyuki

  Fujitsu Laboratories Limited

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Yamaguchi Yasuhiro

  Fujitsu Laboratories Lid.

• Fujii Toshio

  Fujitsu Limited

• Takahashi T

  Department Of Pediatrics Akita University Graduate School Of Medicine

• Takahashi Tsutomu

  Department Of Energy Sciences The Graduate School At Nagatsuta Tokyo Institute Of Technology

• YAMAGUCHI Masahito

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

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著作論文

• AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
• Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
• Gas Source Molecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source
• Si_2H_6 Doping of InP in Gas-Source Molecular Beam Epitaxy Using Triethylindium and Phosphine
• Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
• Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
• A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
• High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• 1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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